power transistor

Due to the important position of termination design in power transistor design, the termination structure applied widely was studied, and its advantage and defect were compared.

鉴于终端设计在功率晶体管设计中的重要地位，本文主要对目前广泛应用的终端结构的研究，探讨它们的优缺点。

Method on Enhancing Temperature Stability of Frequency Power Darlington Transistor

提高功率达林顿晶体管温度稳定性的措施

Evaluation of Second Breakdown of Giant Power Transistor

巨型功率晶体管二次击穿检测

The experimental results of dual emitter ballasting using a complex emitter ballasting resistor which is provided by a diffused silicon resistor and a poly silicon resistor in silicon microwave power transistor are reported.

本文报道了采用多晶硅电阻和扩散电阻组合而成的复合镇流电阻对硅微波功率器件进行二次发射极镇流的实验结果。

High-power transistor drive is not affected by high frequencies.

大功率晶体管驱动不受高频影响.

The results show that silver multilayer metal electrodes deposited by magneton sputtering are effective for reducing the thermal resistance and saturation voltage of power transistor, and for improving the device current character.

结果表明，采用磁控溅射方法制备的银系多层金属电极能显著降低功率晶体管的热阻，减小饱和压降和改善大电流特性。

An uninterrupted power source ( UPS) with VMOS transistor inverse transformer is proposed.

本文介绍一种全自动不间断逆变电源。

Digital Logic Isolation. Line Receiver. Power Supply Control Feedback Control . Switching Power Supply. Transistor Invertor.

数字逻辑隔离. 线路接收器. 电源控制反馈控制. 开关电源. 晶体管逆变器.

At present, according to the principle, the type of potentiostat mainly include magnetic saturation type, SCR, high power transistor type, high-frequency switching type and other different forms of potentiostats.

目前，市面上的恒电位仪的种类从原理上来划分主要包括磁饱和式、可控硅式、大功率晶体管式、高频开关式等不同形式的恒电位仪。

Combined with the design of brushless DC electric motor controller, a method to estimate power loss of IGBT ( Insulated Gate Bipolar Transistor) based on PSPICE simulation is proposed.

结合无刷直流电机控制器的设计，提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT（Insulated Gate Bipolar Transistor）功率损耗的估算方法。

World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division.

世界上最早的半导体器件是整流器和晶体管, 当时并没有功率半导体或微电子半导体之分.

The transistor pulse generator power supply is now commonly employed as a UEDM power supplier.

晶体管脉冲发生器电源共同地现在被使用如同UEDM力量供应商.

Failure Causes Analysis due to Heat Stress of Bipolar Microwave Power Transistor

双极型微波功率晶体管热失效原因分析

Testing on Thermal Characteristics of Pulse Power Transistor under Dynamic and DC Bias

脉冲功率器件直流和动态热特性探测

By combining thyristor switch with large power transistor, large current rectangular pulsed laser power supply with stable smooth top is obtained, pulsed current of 80A and top current fluctuation within 2% are achieved.

采用可控硅开关元件和大功率三极管放大元件相结合的方案，得到稳定大电流脉冲方波激光电源，脉冲电流可达80A，平顶电流波动小于2%。

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

Measurements for Surface Temperature of a Small Target and Thermal Resistance of Power Transistor

微小物体表面温度测量与功率管热阻测试

Study of Electric Ray Annealing on High Power Transistor Chip

低频大功率晶体管芯片的电子束退火研究

Quantitative evaluation of defect according to infrared nondestructive testing principle and quality testing of solder layer of F-4 power transistor package are described. Computer processing results of infrared thermal images are also given.

根据红外无损检测原理，提出了缺陷的定量检测方法，并探讨了F-4型半导体功率管管壳焊料烧结质量的检测方法，最后给出了热图象的计算机处理结果。

The Prerequisite for the Optimal Designing of Nucleus Radiation resistant Power Transistor GAT

抗核辐照功率晶体管GAT优化设计的必要条件

The unbiased Darlington transistor was utilized to avoid crossover distortion and to improve power output for homing transmitting system.

为了解决自导发射系统的交越失真及输出功率问题，采用无偏置型达林顿管替代；